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 HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
s
s s s
s s
32 TIMES STANDARD B-SERIES OUTPUT CURRENT DRIVE SINKING CAPABILITY 136 mA TYP. AT VDD = 10V, V DS = 1V QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"
DIP
SOP
ORDER CODES
PACKAGE DIP SOP TUBE HCF40107BEY HCF40107BM1 T&R HCF40107M013TR
DESCRIPTION HCF40107B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40107B is a dual 2-input NAND buffer/driver containing two independent 2-input NAND buffers with open-drain single n-channel transistor outputs. This device features a wired-OR capability and high output sink current capability (136 mA typ. at VDD = 10V, VDS = 1V).
PIN CONNECTION
October 2002
1/11
HCF40107B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 2, 1, 7, 6 3, 5 4 8 SYMBOL A, B, D, E C,F VSS VDD NAME AND FUNCTION Input Outputs Negative Supply Voltage Positive Supply Voltage
FUNCTIONAL DIAGRAM
TRUTH TABLE
A L H L H B L L H H H* H* H* L C Z# Z# Z#
* : Requires external and pull-up resistor (RL) to VDD. # : Without pull-up resistor (3-state).
2/11
HCF40107B
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDD VI II PD Top Tstg Supply Voltage DC Input Voltage DC Input Current Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature Storage Temperature Parameter Value -0.5 to +22 -0.5 to VDD + 0.5 10 200 100 -55 to +125 -65 to +150 Unit V V mA mW mW C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 20 0 to VDD -55 to 125 Unit V V C
3/11
HCF40107B
DC SPECIFICATIONS
Test Condition Symbol Parameter VI (V) 0/5 0/10 0/15 0/20 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 0.4 1 0.5 1 0.5 <1 <1 <1 <1 <1 <1 VO (V) |IO| VDD (A) (V) 5 10 15 20 5 10 15 5 10 15 5 5 10 10 15 TA = 25C Min. Typ. 0.02 0.02 0.02 0.04 3.5 7 11 1.5 3 4 21 44 49 89 66 32 68 74 136 100 16 30 37 68 50 Max. 5 10 20 100 3.5 7 11 1.5 3 4 12 25 28 51 38 Value -40 to 85C Min. Max. 150 300 600 3000 3.5 7 11 1.5 3 4 -55 to 125C Min. Max. 30 60 120 600 Unit
IL
Quiescent Current
A
VIH**
High Level Input Voltage Low Level Input Voltage Output Sink Current 5 5 10 10 15
V
VIL**
V
IOL
mA
Output Drive Current IIH, IIL Input Leakage Current IOH, IOL 3-State Output Leakage Current *** CI Input Capacitance IOH CO Output Capacitance
No Internal Pull-up Device 0/18 0/18 Any Input 18 Any Input Any Output 18 18 10-5 10-4 5 30
mA
0.1
2 7.5
0.1
2
1
20
A
A pF pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V ** Measured with external pull-up resistor, RL = 10k to VDD. *** Forced output disabled.
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25C, CL = 50pF, RL = 200K, tr = tf = 20 ns)
Test Condition Symbol Parameter VDD (V) 5 10 15 5 10 15 5 10 15 5 10 15 RL* = 120 Min. Value (*) Typ. 100 45 30 100 60 50 50 20 10 50 35 25 Max. 200 90 60 200 120 100 100 40 20 100 70 50 ns Unit
tPHL tPLH Propagation Delay Time High to Low Low to High
RL* = 120
ns
tTHL tTLH Transition Time High to Low Low to High
RL* = 120
ns
RL* = 120
ns
(*) RL is external pull-up resistor to VDD.
4/11
HCF40107B
TYPICAL APPLICATIONS Line-driver Circuit. A 2.2-watt Incandescent Lamp-driver Circuit.
Interface of 40107B with Triac, with COS/MOS Component and Triac isolated.
Solenoid Driver Circuit
Direct Dc Driver Interface of 40107B with a Triac.
5/11
HCF40107B
Multiplexed Led Circuit
6/11
HCF40107B
Motor-controller Circuit Led Driver Circuit
A L H H L H
B L L H H H
MOTOR FUNCTION OFF COUNTER CLOCKWISE AS PREVIOUS STATE CLOCKWISE AS PREVIOUS STATE INHIBIT L H L L ENABLE L L H H OUTPUT OFF OFF OFF ON
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200K RT = ZOUT of pulse generator (typically 50)
7/11
HCF40107B
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
8/11
HCF40107B
Plastic DIP-8 MECHANICAL DATA
mm. DIM. MIN. A a1 B B1 b b1 D E e e3 e4 F I L Z 0.44 3.3 1.6 0.017 8.8 2.54 7.62 7.62 7.1 4.8 0.130 0.063 0.38 0.7 1.39 0.91 0.5 0.5 9.8 0.346 0.100 0.300 0.300 0.280 0.189 0.015 1.65 1.04 TYP 3.3 0.028 0.055 0.036 0.020 0.020 0.386 0.065 0.041 MAX. MIN. TYP. 0.130 MAX. inch
P001F
9/11
HCF40107B
SO-8 MECHANICAL DATA
DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.149 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.189 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
10/11
HCF40107B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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